- News
6 December 2012
President of Lithuania opens Brolis Semiconductors’ MBE and laser diode production facility
Brolis Semiconductors Ltd of Vilnius, Lithuania officially opened its new MBE and laser diode production facility on December 5. Established by brothers Augustinas Vizbaras, Kristijonas Vizbaras and Dominykas Vizbaras in 2011, the firm specializes in mid-infrared type-I GaSb laser diodes and MBE, manufacturing epitaxial wafers for antimonide and arsenide materials for thermal imaging focal plane arrays, CPV and custom devices.
  Picture: Opening  ceremony. From left to right: Augustinas Vizbaras, Kristijonas  Vizbaras, Dominykas Vizbaras, H. E. The President of Lithuania Ms. Dalia  Grybauskaite, Dr. Ralf Meyer ( TU Munich), Prof. Markus-Christian Amann (TU  Munich). Photo by: Dz. G. Barysaite.
Picture: Opening  ceremony. From left to right: Augustinas Vizbaras, Kristijonas  Vizbaras, Dominykas Vizbaras, H. E. The President of Lithuania Ms. Dalia  Grybauskaite, Dr. Ralf Meyer ( TU Munich), Prof. Markus-Christian Amann (TU  Munich). Photo by: Dz. G. Barysaite.
The opening ceremony was led by H. E. The President of Lithuania Ms. Dalia Grybauskaite, who gave an opening speech, followed by speeches by Brolis’ co-founders (the Vizbaras brothers); TU Munich professor Markus-Christian Amann; HE Prime Minister of Lithuania, Mr. Andrius Kubilius; and the managing partner of the venture capital fund LitCapital, Mr. Sarunas Siugzda.
Brolis established the facility in nine months, using money from LitCapital and the EU's Structural Funds. Total investments amount to around EUR 5m. LitCapital provided up to EUR 1m in investments for the first stage of development. The fund has acquired a majority stake in the firm from the Vizbaras brothers.
Dominykas Vizbaras, CEO of Brolis Semiconductors, said the firm had considered three potential sites for the construction of the laboratory. Eventually Lithuania was chosen as the best location, in preference to the USA and Germany.
 Picture:  At the MBE facility. From left to right, Augustinas Vizbaras, the President of  Lithuania, Dominykas Vizbaras, Kristijonas Vizbaras, Prof. Markus-Christian  Amann. Photo by: Dz. G. Barysaite.
Picture:  At the MBE facility. From left to right, Augustinas Vizbaras, the President of  Lithuania, Dominykas Vizbaras, Kristijonas Vizbaras, Prof. Markus-Christian  Amann. Photo by: Dz. G. Barysaite.
"Talented young people are coming back to Lithuania to create business. This is the best proof that business conditions are improving in our country. Such company is an inspiring example of innovative and viable business model. Not only it creates jobs but also makes our country competitive," said Dalia Grybauskaite, President of Lithuania.
“This ceremony marks a great event for us, the co-founders, as well as our company people. We have been putting maximum efforts in the last couple of months to finish the facility on time. However, this is just the beginning, the hardest work and most difficult challenge is still ahead of us. Our next nearest goal is to bring the first batch of our R&D laser diode products by the end of February 2013 and this is where our efforts are being directed at the moment. We hope that in the next few years we will be able to grow and to establish ourselves as a reliable supplier for mid-infrared optoelectronic components and epi-material in the global market.” said Dominykas Vizbaras.
Brolis says it has already attracted interest from several US and European high-technology companies, which have expressed serious intentions to buy its products.
Brolis MBE Epitaxial wafers Laser diodes






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©2006-2016
    Juno Publishing and Media Solutions Ltd. All rights reserved. Semiconductor
    Today and the editorial material contained within it and related media is
    the copyright of Juno Publishing and Media Solutions Ltd. Reproduction in
    whole or part without permission from Juno Publishing and Media Solutions
    Ltd is forbidden. In most cases, permission will be granted, if the magazine
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